芯片

Chapter 4 Ripple-Based Control Technique Part I-3 前面介绍了采样电感电流current feedback, 和Vfb形成Vsum, 提高COT小ESR

Chapter 4 Ripple-Based Control Technique Part I 4.2 Stability Criterion of On-Time Controlled Buck C

Chapter 3 Design of Switching Power Regulators Power Management Techniques for Integrated Circuit De

Chapter 10 Inductive DC–DC Converters IV Design of Power Management Integrated Circuits - Bernhard W

Chapter 10 Inductive DC–DC Converters III Design of Power Management Integrated Circuits - Bernhard

Chapter 10 Inductive DC–DC Converters II Design of Power Management Integrated Circuits - Bernhard W

Chapter 10 Inductive DC–DC Converters Design of Power Management Integrated Circuits - Bernhard Wich

Chapter 6 Protection and Sensing 这一章介绍power stage的保护和sensing电路. 其需要基准电压, 基准电流, 确保power stage不会过压和过流.

Chapter 3 Semiconductor Devices 这一章介绍功率管和diode.下图为 独立器件 D2PAK (Double Decawatt Package, also classif

Chapter 3 Semiconductor Devices 这一章介绍功率管和diode.下图为 独立器件 D2PAK (Double Decawatt Package, also classif

Chapter 8 Charge Pump 8.1 Introduction 电荷泵就是capacitive DC–DC converters, 一般把小功率bias generation叫做电荷泵,

Chapter 7 Linear Voltage Regulators 这一章我们介绍LDO. 7.1 Fundamental Circuit and Control Concept LDO基本原理图

Chapter 1 Introduction Design of Power Management Integrated Circuits 这本教材由德国教授 Bernhard Wicht编写于202

Chapter 4 Noise performance of elementary transistor stages 在介绍运放之前, 这一章介绍噪声 噪声是看RMS电压, 即Root-Mean-S

Chapter 3 Differential Voltage & Current amplifiers 这一章介绍差分电压和电流放大器. Current mirrors 我们首先分析电流镜Curren

Chapter 1 Comparison of MOS and Bipolar transistor models MOS管作为电阻 Vds<<Vgs-Vth, Ron可由下式表示 增加Vbs会增加耗

Chapter 19 Layout and Packaging 这一章我们介绍版图和封装, 关注模拟和数字电路的要求. 首先讲模拟电路中layout设计考虑, 然后解决衬底coupling问题, 最后

Chapter 18 CMOS Processing Technology 这一章介绍CMOS制造工艺, 介绍wafer制作, 光刻, 氧化, 离子注入, 沉淀(deposition)和刻蚀. 然后介

CHAPTER 15 Oscillators 这一章介绍CMOS振荡器, VCO(电压控制振荡器). 先学习振荡器负反馈系统, 介绍环形振荡器和LC振荡器, 和改变频率的各种方法. 然后介绍VCO的建

chapter 12 Bandgap References 这一章我们介绍电压和电流基准. 首先学习和输入电压无关的偏置和起动问题. 然后介绍和温度有关的基准电压, 考虑offset对输出电压的影响.